1. Northern Huachuang: Operating income in 2020 was 6.056 billion, a year-on-year increase of 49.23%.

The company can provide third-generation semiconductor-related equipment. For silicon carbide, it can provide crystal growth furnaces, epitaxial furnaces, etching, high-temperature annealing, oxidation, PVD, cleaning machines and other equipment. For gallium nitride, it can provide etching, PECVD,

Cleaning machines and other equipment.

2. Wingtech Technology: Operating income in 2020 was 51.71 billion, a year-on-year increase of 24.36%.

The company will increase investment in the third-generation semiconductor field and vigorously develop gallium nitride and silicon carbide technologies.

3. *ST King Kong: Operating income in 2020 is 478 million, a year-on-year increase of -49.93%.

The company's products can be used in fields such as semiconductor silicon slicing.

4. Taiji Co., Ltd.: Operating income in 2020 is 388 million, a year-on-year increase of 46.54%.

Hubei enterprise (may be prioritized for investment in the second phase of large funds); an important enterprise in the power semiconductor market segment, tracking and developing third-generation wide bandgap semiconductor materials represented by SiC (silicon carbide) and GaN (gallium nitride) and

device technology.

Silicon carbide is an inorganic substance with the chemical formula SiC. It is smelted at high temperature in a resistance furnace using raw materials such as quartz sand, petroleum coke (or coal coke), and wood chips (salt is required when producing green silicon carbide).

Silicon carbide also exists in nature as a rare mineral, moissanite.

Among non-oxide high-tech refractory raw materials such as C, N, and B, silicon carbide is the most widely used and economical one, and can be called emery sand or refractory sand.

Silicon carbide produced industrially in China is divided into black silicon carbide and green silicon carbide, both of which are hexagonal crystals with a specific gravity of 3.20 to 3.25 and a microhardness of 2840 to 3320kg/mm2.

Material varieties: Silicon carbide has two commonly used basic varieties: black silicon carbide and green silicon carbide, both of which belong to α-SiC.

① Black silicon carbide contains about 95% SiC, and its toughness is higher than green silicon carbide. It is mostly used to process materials with low tensile strength, such as glass, ceramics, stone, refractory materials, cast iron and non-ferrous metals.

② Green silicon carbide contains more than 97% SiC and has good self-sharpening properties. It is mostly used for processing cemented carbide, titanium alloy and optical glass. It is also used for honing cylinder liners and fine grinding of high-speed steel cutting tools.

In addition, there is cubic silicon carbide, which is a yellow-green crystal produced by a special process. The abrasive tools used to make it are suitable for super-finishing of bearings, and can make the surface roughness from Ra32 ~ 0.16 microns to Ra0.04 ~

0.02 micron.

Physical and chemical properties: Material properties: Due to its stable chemical properties, high thermal conductivity, small thermal expansion coefficient, and good wear resistance, silicon carbide has many other uses in addition to being used as abrasives. For example, silicon carbide powder is coated on the surface using a special process.

The inner wall of the turbine impeller or cylinder block can improve its wear resistance and extend its service life by 1 to 2 times; the advanced refractory materials made of it are thermal shock resistant, small in size, light in weight, high in strength, and have good energy-saving effects.

Low-grade silicon carbide (containing about 85% SiC) is an excellent deoxidizer. It can speed up steelmaking, facilitate control of chemical composition, and improve the quality of steel.

In addition, silicon carbide is also widely used in the production of silicon carbide rods for electric heating elements.

Silicon carbide is very hard, with a Mohs hardness of 9.5, second only to the world's hardest diamond (level 10). It has excellent thermal conductivity, is a semiconductor, and can resist oxidation at high temperatures.