Gender: Female

Date of birth: April 1947

Place of Birth: Hebei Province

Title: Professor, Doctoral Supervisor

Postal code: 300072

Office Tel: 27890832

Mobile phone: 8 1 125362

Home phone:

E-mail :syyao@tju.edu.cn

SETTING: School of Electronic Information Engineering, Department of Electronic Technology.

Research direction 1: ASIC design.

Research direction 2: semiconductor sensor and its integrated system design (integrated circuit combined with MEMS)

Research direction 3: VLSI testing, testability design and microelectronic reliability research.

Introduction:

1965 to 1970 graduated from Tianjin university 1970, and has been engaged in the teaching and research of microelectronics technology. He is currently a professor, doctoral supervisor and director of ASIC design center of Tianjin University. He is also a member of Semiconductor and Integrated Technology Branch of Chinese Institute of Electronics, director of Tianjin Integrated Circuit Design Technology Training Center, and head of Tianjin Integrated Circuit Design Incubation Platform. Professor has been employed as a doctoral supervisor since1997,2001. From September 2002 to June 2003, he was appointed as a senior visiting scholar at the University of Texas at Austin by the National Scholarship Fund Committee.

Long-term engaged in microelectronics teaching and research, training doctoral students and master students; Instructed a postdoctoral fellow (one has left the station) and won a Motorola scholarship. He has presided over or participated in the national eighth five-year plan, ninth five-year plan, national natural fund and provincial and municipal projects. Published relevant papers in academic journals at home and abroad. The research of silicon photodetector has been commercialized and patented.

Representative works:

Patented: silicon photodetector 2003 ZL 0499.38+0.

Semiconductor Physics and Devices (3rd Edition) Electronic Industry Press, February, 2005, the first printing isbn: 7-1 21-00863-7.

Representative paper: 1 simulation calculation of stress distribution of polysilicon double-island pressure sensor. Journal of Electronic Science, Vol.27, No.65438+01ei: 00095310277; 2 Power consumption optimization of pipelined ADC, Journal of Tianjin University (English version), No.4, 2004 Vol. 10 No.4p280-284ei: 0509 8865889; 3 Design and implementation of timing control circuit for CMOS image sensor with high frame rate and large dynamic range 20041/Journal of Electronics, Vol.32, No.65438+0p1922-1925ei: 0504 8806886; 4 Simulation and test of a new SOI high temperature pressure sensor ics ICT'2004 Beijing ICSICT 2004 Volume P1824-1827EI: 05299217792; Research and development of pixel-level double sampling storage technology for solid-state electronics of 5 CMOS image sensor, No.3 issue of 2005, EI:05469477904；; ; 6 Extraction of ulsi interconnection resistance at high frequency Journal of Tianjin University (English version) Vol.11No.3ei: 0532 9290370; 7 Surface Wave Dispersion Characterization of Mechanical Properties of ULSI Low Dielectric Constant Interconnects, Journal of Semiconductors, No.6, 2005, Vol.26, Page 10, 2032-2033ei: 05519604671; 8 Design and Implementation of a Low Power and High Precision CMOS Dynamic Comparator Journal of Sensing Technology, Vol. 18,No. 1 2005 EI: 05409400801; 9 Research on Optimization of Capacitance Array Based on DPGA in CMOS Image Sensor Journal of Sensing Technology, 18, No.2, 2005, EI: EI 0531927 571; Development of 10 oilfield logging pressure sensor, Journal of Sensing Technology, 17, No.2, 2004; 11Study on impact ionization and breakdown under MOSFET gate; Research and progress of solid-state electronics, Volume 24,No.12004; 12 temperature characteristics of polysilicon high-temperature pressure sensor Journal of xidian university 2002.vol.29.50038+0;

Application of 13 TMAH in pressure sensor manufacturing Journal of University of Electronic Science and Technology of China, 2000, Vol.29, No.6; EI:0 1035574678； Simulation calculation and optimization design of 14 SOI single crystal silicon pressure sensor Journal of Sensing Technology 2003

Awards:

Won the Motorola Award.

Teaching courses:

Undergraduate course content: semiconductor physics, Si -SiO2 interface physics, master course: semiconductor theory, MEMS theory and design, introduction to VLSI automatic test, doctoral course: advanced semiconductor theory, MEMS and nanotechnology,

Undertake the project:

1 Research on Deep Submicron Ten-pixel CMOS Image Sensor Project Leader of National Natural Science Foundation in 2006-2008; 2. Tianjin Innovation Fund Project: The research and industrialization of CMOS image sensor and the construction of Tianjin integrated circuit design incubation platform were started in 2006. Project leader 3. Video format conversion chip 2004-2006 Tianjin Science and Technology Commission 043184514, Research on hardness characteristics of nano-porous media for integrated circuit interconnection by surface wave method, National Natural Science Foundation of China 60406003 5, Research on high-efficiency nano-silicon quantum dot cold electron field emission display device, Tianjin Natural Science Foundation project 0436/KLOC.

Completed projects:

National or provincial scientific research projects completed in recent five years (since 200 1 1)

1 Research on High-stability High-temperature Pressure Sensor National Natural Science Foundation 69876027 2001-12-3/Project Leader of National Natural Science Foundation 2 Research on High-performance Visual Semiconductor Photoelectric Modern Detector Tianjin Science and Technology Key Project 02310751 38+October Project Leader of Tianjin Science and Technology Commission 3 Research and Development of High Performance and Large Dynamic Range CMOS Image Sensor Tianjin Science and Technology Commission 03318391KLOC-0/August 2005 Project Leader 4 Research on Integrated Circuit Testing Technology Tianjin Foreign Experts Bureau Introduction Project 2003 086 Tianjin Personnel Bureau Project Leader 5 Tianjin Integrated Circuit Design Technology Training. Training Center 2003-2005 Project Leader of Tianjin Science and Technology Commission 03318841Project Leader of VLSI Testability Design and Verification Platform 2004-2005 Project Leader of Tianjin Science and Technology Commission 04311; 7 Research on the Application of Semiconductor High Temperature SOI Pressure Sensor; Tianjin Natural Science Foundation Project 033600811; The research and development of new photoelectric devices has been commercialized.