A Schottky barrier refers to a metal-semiconductor contact that has rectifying properties, just like a diode has rectifying properties.

It is a rectifying region formed on the metal-semiconductor boundary.

Schottky barrier refers to a metal-semiconductor contact with a large barrier height (that is, ΦBn or ΦBp >> kT) and a doping concentration lower than the state density of the conduction band or valence band (Shi Min, Semiconductor Device Physics and

Process, 2nd ed., 7.1.2).

Schottky diode is named after its inventor, Dr. Schottky. SBD is the abbreviation of Schottky Barrier Diode (abbreviated as SBD).

SBD is not made by using the principle of PN junction formed by contact between P-type semiconductor and N-type semiconductor, but by the principle of metal-semiconductor junction formed by contact between metal and semiconductor.

Therefore, SBD is also called a metal-semiconductor (contact) diode or surface barrier diode, which is a hot carrier diode.

Schottky contact means that when metal and semiconductor materials come into contact, the energy band of the semiconductor bends at the interface, forming a Schottky barrier.

The existence of potential barriers leads to large interface resistance.

Corresponding to this is ohmic contact, where the potential barrier at the interface is very small or there is no contact barrier.

The Schottky barrier refers to a metal-semiconductor contact that has rectifying properties, just like a diode has rectifying properties.

It is a rectifying region formed on the metal-semiconductor boundary.