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Diode identification problem?
Symbol of semiconductor diode parameters and its significance

CT-barrier capacitance

Cj-Junction (inter-electrode) capacitance, which indicates the total capacitance of germanium detector diode at both ends of diode under specified bias voltage.

Cjv-bias junction capacitance

Common zero bias capacitor

Cjo-zero bias junction capacitance

Cjo/cjn- junction capacitance change

Cs-shell capacitance or package capacitance

Ct-total capacitance

CTV voltage temperature coefficient. The ratio of the relative change of stable voltage to the absolute change of ambient temperature under test current.

CTC-Temperature coefficient of capacitor

Cvn-Nominal capacitance

Intermediate frequency-forward DC current (forward test current). Germanium detection diode passes through the current between electrodes under the specified DC voltage VF; The maximum working current (average value) that the silicon rectifier tube and the silicon stack are allowed to pass continuously with sinusoidal half-wave under the specified use conditions, and the maximum forward DC current that the silicon switching diode is allowed to pass under the rated power; The given current when measuring the forward electrical parameters of zener diode

If(av)- forward average current

IFM(IM)- Forward peak current (forward maximum current). Maximum allowable forward pulse current of diode under rated power. Limit current of light emitting diode.

IH-constant current, holding current.

Ii-Glow photocurrent of LED

IFRM is repeating peak current.

Forward non-repetitive peak current of IFSM (surge current)

Io rectified current. The working current of a specific line at a specific frequency and voltage.

If(ov)- positive overload current

IL-photocurrent or limit current of stabilizing diode

ID-dark current

IB2 base modulation current in single junction transistor

IEM emitter peak current

Reverse current between emitter and first base in IEB 10-double-base single-junction transistor

IEB20-emitter current in double-base single-junction transistor

ICM-Maximum average output current

IFMP forward pulse current

IP peak current

IV-valley current

IGT trigger current of thyristor control electrode

IGD-thyristor control electrode does not trigger current.

IGFM-positive peak current of control electrode

IR(av)- reverse average current

IR(in)- reverse DC current (reverse leakage current). When measuring the reverse characteristic, the given reverse current; The current passing through the silicon stack in a sinusoidal half-wave resistive load circuit with a specified reverse voltage; The current flowing when the reverse working voltage VR is applied to the silicon switching diode; Leakage current generated by zener diode under reverse voltage; Leakage current of rectifier under maximum reverse working voltage of sine half wave.

IRM-reverse peak current

Thyristor reverse repetitive average current

IDR-average repetitive current of thyristor in off state

IRRM reverse repetitive peak current

IRSM reverse non-repetitive peak current (reverse surge current)

reverse recovery current

Iz-stable voltage and current (reverse test current). When testing the reverse electrical parameters, given the reverse current

Inflexion current of voltage regulator

IOM-Maximum forward (rectified) current. The maximum forward instantaneous current that can be sustained under specific conditions; In the sinusoidal half-wave rectifier circuit with resistive load, the maximum working current allowed to pass through the germanium detector diode continuously.

Surge current of IZSM-zener diode

IZM-Maximum regulated current. The current allowed by Zener diode under the maximum power consumption.

IF-positive total instantaneous current

IR-reverse total instantaneous current

reverse recovery current

Iop-operating current

Is-current stabilizing diode stabilizes current.

F frequency

N-capacitance change index; capacitance ratio

Q-excellent value (quality factor)

Δ vz-Voltage drift of voltage regulator

Di/dt- critical rising rate of on-state current

Dv/dt- critical rise rate of on-state voltage

Resistant to pulse combustion power.

Pft(av)- average dissipation power of forward conduction.

PFTM positive peak dissipation power

PFT-total instantaneous dissipation power of forward conduction

Pd-dissipation power

PG-average gate power

PGM-gate peak power

PC-Controls the average power of the electrode or the power consumed by the collector.

Pi-input power

PK-maximum switching power

PM-rated power. The junction temperature of the silicon diode is not higher than the maximum power that can be maintained at 150 degrees.

PMP-maximum leakage pulse power

PMS-Maximum withstand pulse power

Po-output power

PR-reverse surge power

Ptot-total dissipated power

Pomax-maximum output power

Psc-continuous output power

PSM-non-repetitive surge power

PZM-maximum dissipated power. The maximum allowable power of Zener diode under a given use condition.

RF(r)- forward differential resistance. When conducting forward, with the increase of voltage index, the current presents obvious nonlinear characteristics. At a certain DC voltage, if the voltage increases by a small amount of △V and the forward current increases by △I, then △V/△I is called differential resistance.

Base-to-base resistance of double-base transistor

Radio frequency resistor

RL-load resistance

RS(RS)- series resistance

Rth-thermal resistance

R(th)ja- thermal resistance from junction to environment.

Rz(ru)- dynamic resistance

R (th) JC-Thermal resistance from the contact to the shell.

R δ-attenuation resistance

R(th)- transient resistance

Ta-ambient temperature

Tc-shell temperature

Td-delay time

Tf-falling time

Tfr-forward recovery time

Tg-circuit commutation turn-off time

Tgt-Gate-controlled electrode opening time

Tj junction temperature

Tjm-Maximum junction temperature

Ton opening time

Off time

Tr-rise time

Trr-reverse recovery time

Ts-storage time

Tstg-storage temperature of temperature compensation diode

A-temperature coefficient

λp- peak wavelength of luminescence

δ λ-spectral half width

η —— the voltage division ratio or efficiency of single junction transistor.

Reverse peak breakdown voltage

Vc rectified input voltage

VB2B 1-Voltage between bases

VBE 10-reverse voltage between emitter and first base.

VEB saturation pressure drop

VFM-maximum forward voltage drop (forward peak voltage)

VF-direct voltage drop (forward DC voltage)

△ VF-positive pressure drop difference

VDRM-repetitive peak voltage in off state

VGT gate trigger voltage

VGD gate voltage is not triggered.

VGFM-gate positive peak voltage

VGRM-gate reverse peak voltage

VF(av)- forward average voltage

Vo-AC input voltage

VOM-maximum output average voltage

Vop-operating voltage

Vn-center voltage

Vp-peak voltage

VR-reverse working voltage (reverse DC voltage)

VRM-Reverse peak voltage (highest test voltage)

V(br)- breakdown voltage

Vth-valve voltage (mosfet)

VRRM-Reverse repetitive peak voltage (reverse surge voltage)

VRWM-peak operating reverse voltage

V v-valley voltage

Vz stable voltage

△ vz-voltage increment within the voltage stabilizing range

Vs-Voltage-to-voltage (signal voltage) or stable current voltage of ballast.

Av-voltage temperature coefficient

Vk-inflection point voltage (ballast diode)

VL limit voltage