CT-barrier capacitance
Cj-Junction (inter-electrode) capacitance, which indicates the total capacitance of germanium detector diode at both ends of diode under specified bias voltage.
Cjv-bias junction capacitance
Common zero bias capacitor
Cjo-zero bias junction capacitance
Cjo/cjn- junction capacitance change
Cs-shell capacitance or package capacitance
Ct-total capacitance
CTV voltage temperature coefficient. The ratio of the relative change of stable voltage to the absolute change of ambient temperature under test current.
CTC-Temperature coefficient of capacitor
Cvn-Nominal capacitance
Intermediate frequency-forward DC current (forward test current). Germanium detection diode passes through the current between electrodes under the specified DC voltage VF; The maximum working current (average value) that the silicon rectifier tube and the silicon stack are allowed to pass continuously with sinusoidal half-wave under the specified use conditions, and the maximum forward DC current that the silicon switching diode is allowed to pass under the rated power; The given current when measuring the forward electrical parameters of zener diode
If(av)- forward average current
IFM(IM)- Forward peak current (forward maximum current). Maximum allowable forward pulse current of diode under rated power. Limit current of light emitting diode.
IH-constant current, holding current.
Ii-Glow photocurrent of LED
IFRM is repeating peak current.
Forward non-repetitive peak current of IFSM (surge current)
Io rectified current. The working current of a specific line at a specific frequency and voltage.
If(ov)- positive overload current
IL-photocurrent or limit current of stabilizing diode
ID-dark current
IB2 base modulation current in single junction transistor
IEM emitter peak current
Reverse current between emitter and first base in IEB 10-double-base single-junction transistor
IEB20-emitter current in double-base single-junction transistor
ICM-Maximum average output current
IFMP forward pulse current
IP peak current
IV-valley current
IGT trigger current of thyristor control electrode
IGD-thyristor control electrode does not trigger current.
IGFM-positive peak current of control electrode
IR(av)- reverse average current
IR(in)- reverse DC current (reverse leakage current). When measuring the reverse characteristic, the given reverse current; The current passing through the silicon stack in a sinusoidal half-wave resistive load circuit with a specified reverse voltage; The current flowing when the reverse working voltage VR is applied to the silicon switching diode; Leakage current generated by zener diode under reverse voltage; Leakage current of rectifier under maximum reverse working voltage of sine half wave.
IRM-reverse peak current
Thyristor reverse repetitive average current
IDR-average repetitive current of thyristor in off state
IRRM reverse repetitive peak current
IRSM reverse non-repetitive peak current (reverse surge current)
reverse recovery current
Iz-stable voltage and current (reverse test current). When testing the reverse electrical parameters, given the reverse current
Inflexion current of voltage regulator
IOM-Maximum forward (rectified) current. The maximum forward instantaneous current that can be sustained under specific conditions; In the sinusoidal half-wave rectifier circuit with resistive load, the maximum working current allowed to pass through the germanium detector diode continuously.
Surge current of IZSM-zener diode
IZM-Maximum regulated current. The current allowed by Zener diode under the maximum power consumption.
IF-positive total instantaneous current
IR-reverse total instantaneous current
reverse recovery current
Iop-operating current
Is-current stabilizing diode stabilizes current.
F frequency
N-capacitance change index; capacitance ratio
Q-excellent value (quality factor)
Δ vz-Voltage drift of voltage regulator
Di/dt- critical rising rate of on-state current
Dv/dt- critical rise rate of on-state voltage
Resistant to pulse combustion power.
Pft(av)- average dissipation power of forward conduction.
PFTM positive peak dissipation power
PFT-total instantaneous dissipation power of forward conduction
Pd-dissipation power
PG-average gate power
PGM-gate peak power
PC-Controls the average power of the electrode or the power consumed by the collector.
Pi-input power
PK-maximum switching power
PM-rated power. The junction temperature of the silicon diode is not higher than the maximum power that can be maintained at 150 degrees.
PMP-maximum leakage pulse power
PMS-Maximum withstand pulse power
Po-output power
PR-reverse surge power
Ptot-total dissipated power
Pomax-maximum output power
Psc-continuous output power
PSM-non-repetitive surge power
PZM-maximum dissipated power. The maximum allowable power of Zener diode under a given use condition.
RF(r)- forward differential resistance. When conducting forward, with the increase of voltage index, the current presents obvious nonlinear characteristics. At a certain DC voltage, if the voltage increases by a small amount of △V and the forward current increases by △I, then △V/△I is called differential resistance.
Base-to-base resistance of double-base transistor
Radio frequency resistor
RL-load resistance
RS(RS)- series resistance
Rth-thermal resistance
R(th)ja- thermal resistance from junction to environment.
Rz(ru)- dynamic resistance
R (th) JC-Thermal resistance from the contact to the shell.
R δ-attenuation resistance
R(th)- transient resistance
Ta-ambient temperature
Tc-shell temperature
Td-delay time
Tf-falling time
Tfr-forward recovery time
Tg-circuit commutation turn-off time
Tgt-Gate-controlled electrode opening time
Tj junction temperature
Tjm-Maximum junction temperature
Ton opening time
Off time
Tr-rise time
Trr-reverse recovery time
Ts-storage time
Tstg-storage temperature of temperature compensation diode
A-temperature coefficient
λp- peak wavelength of luminescence
δ λ-spectral half width
η —— the voltage division ratio or efficiency of single junction transistor.
Reverse peak breakdown voltage
Vc rectified input voltage
VB2B 1-Voltage between bases
VBE 10-reverse voltage between emitter and first base.
VEB saturation pressure drop
VFM-maximum forward voltage drop (forward peak voltage)
VF-direct voltage drop (forward DC voltage)
△ VF-positive pressure drop difference
VDRM-repetitive peak voltage in off state
VGT gate trigger voltage
VGD gate voltage is not triggered.
VGFM-gate positive peak voltage
VGRM-gate reverse peak voltage
VF(av)- forward average voltage
Vo-AC input voltage
VOM-maximum output average voltage
Vop-operating voltage
Vn-center voltage
Vp-peak voltage
VR-reverse working voltage (reverse DC voltage)
VRM-Reverse peak voltage (highest test voltage)
V(br)- breakdown voltage
Vth-valve voltage (mosfet)
VRRM-Reverse repetitive peak voltage (reverse surge voltage)
VRWM-peak operating reverse voltage
V v-valley voltage
Vz stable voltage
△ vz-voltage increment within the voltage stabilizing range
Vs-Voltage-to-voltage (signal voltage) or stable current voltage of ballast.
Av-voltage temperature coefficient
Vk-inflection point voltage (ballast diode)
VL limit voltage