Delete the thank-you fund

Room temperature? Thermoelectricity? Attribute? Yes? Gan? Thin? Movies? Grow up? By who? Metal? Organic? Chemicals? sediment

Author: Wang, BZ? (Wang Baozhu) [? 1,2,4? ]? ; ? Zhang? (Zhang Xiuqing) [? 1? ]? ; ? Zhang, AD? (Zhang Aodi) [? 1? ]? ; ? Zhou, XR? (Zhou xiaoran) [? 1? ]? ; ? Kucukgok, b (Kucukgok, Bahadir) [? 2? ]? ; ? So, me? (Lu Na) [? 3? ]? ; ? Little, HL? (Xiao Hongling) [? 4? ]? ; ? Wang, XL? (Wang Xiaoliang) [? 4? ]? ; ? Ferguson, it? Ian ferguson? 2? ]

ACTA physics

Volume:? 64

Period: four

Submission number:? 047202

DOI:？ 10.7498

Year of publication:? 20 February 20 15

View periodical information

abstract

GaN films with different doping concentrations were grown by metal organic chemical vapor deposition. The carrier concentration, mobility and Zeebek coefficient of GaN thin films were measured by Hall and Zeebek systems at room temperature. The power factor and thermoelectric quality factor are calculated by experimental and theoretical data. The mobility and Zeebek coefficient of GaN films decrease with the increase of carrier concentration. The conductivity of GaN thin films increases with the increase of carrier concentration. The Zeebek coefficient of Ga N thin films varies from 100 to 500μV/K, depending on the carrier concentration. When the carrier concentration is1.60x10 (18) cm (-3), the highest power factor is 4.72 x 10(-4) W/mK(2). Due to the increase of phonon scattering, the thermal conductivity of GaN films decreases with the increase of carrier concentration. When the carrier concentration is1.60×10 (18) cm (-3), the maximum thermoelectric figure of merit of GaN thin films at room temperature is 0.0025.

key word

Author keywords: GaN thin film; ? Thermoelectric characteristics

Author information

Correspondent address:? Wang, BZ (correspondent)

Hebei University of Science and Technology; Science and technology information school. People's Republic of China (PRC) Shijiazhuang 0500 18 engineer.

Address:

Hebei University College of Science and Technology; Science and technology information school. People's Republic of China (PRC) Shijiazhuang 0500 18 Engineer

[2] Department of Electronics, University of North Carolina. Engineering Company, Charlotte, North Carolina, USA, 28223.

[3] Department of Engineering and Technology, University of North Carolina, Charlotte, North Carolina, USA, 28223.

[4] Institute of Semiconductors, Chinese Academy of Sciences, China, Beijing 100083.

:wangbz@semi.ac.cn e-mail address

Thanks for the support of the fund.

Fund-funded institutions

Authorization number

National natural science foundation?

6 1076052?

Natural Science Fund of Hebei Province?

F20 13208 17 1？

Check fund information?