Silicon carbide (SiC) is a wide band gap semiconductor material with high thermal conductivity, high breakdown field strength, high saturated electron drift rate, high chemical stability and radiation resistance, and its lattice constant and thermal expansion coefficient are similar to those of gallium nitride (GaN). It is not only an ideal substrate material for manufacturing high-brightness light-emitting diodes (HB-LEDs), but also an ideal material for manufacturing high-temperature, high-frequency, high-power and radiation-resistant electronic devices.

The main application fields of silicon carbide wafer are LED solid-state lighting and high-frequency devices. This material has excellent characteristics such as band gap, drift speed, breakdown voltage, thermal conductivity and high temperature resistance, which is several times higher than traditional silicon. It has irreplaceable advantages in electronic applications such as high temperature, high voltage, high frequency, high power, photoelectricity, radiation resistance and microwave, and in extreme environmental applications such as aerospace, military industry and nuclear energy.