China’s transistor model naming method

China’s semiconductor device model consists of five parts (field effect devices, semiconductor special devices, composite tubes, PIN tubes, and laser devices). The model naming only has the third , four and five parts). The meanings of the five parts are as follows:

Part 1: Use numbers to indicate the number of effective electrodes in semiconductor devices. 2-Diode

3-Transistor

Part 2: Use Chinese Pinyin letters to represent the materials and polarity of semiconductor devices. When indicating a diode:

A-N type germanium material

B-P type germanium material

C-N type silicon material

D-P type silicon material

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When referring to transistor:

A-PNP type germanium material,

B-NPN type germanium material,

C-PNP type silicon material ,

D-NPN silicon material.

Part 3: Use Chinese Pinyin letters to represent the types of semiconductor devices. P-ordinary tube,

V-microwave tube

W-voltage regulator tube

C-parameter tube

Z-rectifier tube

L-rectifier stack

S-tunnel tube

N-damping tube

U-photoelectric device

K-switching tube

X-low-frequency low-power tube (F<3MHz, Pc<1W)

G-high-frequency low-power tube (f>3MHz, Pc<1W)

D-Low-frequency high-power tube (f1W)

A-High-frequency high-power tube (f>3MHz, Pc>1W)

T-Semiconductor thyristor (Controllable rectifier)

Y-body effect device

B-avalanche tube

J-step recovery tube

CS- Field effect tube

BT-semiconductor special device

FH-composite tube

PIN-PIN type tube

JG-laser device.

Part 4: Use numbers to express serial numbers. Part 5: Use Chinese pinyin letters to express specification numbers. For example: 3DG18 represents NPN silicon material high-frequency transistor

American transistor model naming method< /p>

The nomenclature of transistors or other semiconductor devices in the United States is confusing. The naming method of semiconductor discrete devices of the American Electronics Industry Association is as follows:

1. Part 1: Use symbols to indicate the type of device use. JAN-military grade

JANTX-special military grade

JANTXV-super special military grade

JANS-aerospace grade

(none) -Non-military items.

2. Part 2: Use numbers to express the number of pn junctions. 1-diode

2-transistor

3-three pn junction devices

n-and so on

3. Part 3 : Registered mark of the Electronic Industries Association (EIA). N-This device is registered with the Electronic Industries Association (EIA).

4. Part 4: American Electronics Industry Association registration sequence number. Multi-digit number - The serial number of the device registered with the Electronic Industries Association.

5. Part 5: Use letters to indicate device classification. A, B, C, D, ┄┄-different grades of the same type of device.

For example: JAN2N3251A represents PNP silicon high-frequency low-power switching transistor, JAN-military grade, 2-transistor, N-EIA registration mark, 3251-EIA registration sequence number, A-2N3251A grade.

Japanese transistor model naming method

Semiconductor discrete devices produced in Japan consist of five to seven parts. Usually only the first five parts are used, and the symbolic meanings of each part are as follows:

1. Part 1: Use numbers to indicate the number or type of effective electrodes of the device. 0-Photoelectric (i.e. photosensitive) diode, triode and combination tube of the above devices,

1-Diode

2-Triode or other device with two pn junctions,

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3-Other devices with four effective electrodes or three pn junctions

2. Part 2: Japan Electronics Industry Association JEIA registration mark.

S- indicates semiconductor discrete devices registered with JEIA, the Japan Electronics Industry Association.

3. Part 3: Use letters to indicate the polarity and type of materials used in the device. A-PNP type high frequency tube

B-PNP type low frequency tube

C-NPN type high frequency tube

D-NPN type low frequency tube

F-P control pole thyristor

G-N control pole thyristor

H-N base single-junction transistor

J-P channel field effect transistor

K-N channel field effect transistor

M-triac

4. Part 4: Use numbers to indicate the serial number registered with JEIA, the Japan Electronics Industry Association. An integer of more than two digits - starting from "11", indicating the serial number registered with the Japan Electronics Industry Association JEIA; devices with the same performance from different companies can use the same serial number; the larger the number, the more recent the product.

5. Part 5: Use letters to indicate improved product marks of the same model. A, B, C, D, E, and F indicate that this device is an improved product of the original model.

European transistor model naming method

Some countries in Europe, such as Germany and the Netherlands, adopt the following naming method.

1. The first part O- represents the semiconductor device

2. The second part A-diode

C-transistor

AP- Photodiode

CP-Phototransistor

AZ-Voltage Regulator

RP-Optoelectronic Device

3. Part 3: More Digits - indicates the registration serial number of the device 4. Part 4 A, B, C┄┄ - indicates variant products of the same type of device.

International transistor model naming method

European countries such as Germany, France, Italy, the Netherlands, and Belgium, as well as Eastern European countries such as Hungary, Romania, Yugoslavia, and Poland, mostly use the International Electronics Federation Semiconductor Discrete device model naming method. This naming method consists of four basic parts. The symbols and meanings of each part are as follows:

1. Part 1: Use letters to indicate the materials used in the device. A-The band gap of the material used in the device is Eg=0.6~1.0eV, such as germanium

B-The material used in the device is Eg=1.0~1.3eV, such as silicon

C-The material used in the device Eg>1.3eV such as gallium arsenide

D-devices use materials with Eg<0.6eV such as indium antimonide

E-devices use composite materials and materials used in photovoltaics

2. Part 2: Use letters to indicate the type and main characteristics of the device. A-Detector switch mixing diode

B-Varactor diode

C-Low-frequency low-power transistor

D-Low-frequency high-power transistor

F-High-frequency low-power transistor

G-Composite devices and other devices

H-Magnetic diode

K-Hall element in open magnetic circuit

L-High-frequency high-power transistor

M-Hall element in closed magnetic circuit

P-Photosensitive device

Q-Light-emitting device

R-Low power thyristor

S-Low power switching tube

T- High-power thyristor

U-high-power switching tube

X-multiplier diode

Y-rectifier diode

Z-zener diode

3. Part 3: Use numbers or letters plus numbers to represent the registration number. Three digits - represents the registration serial number of general-purpose semiconductor devices, and one letter plus two digits - represents the registration serial number of special-purpose semiconductor devices.

4. Part 4: Use letters to classify devices of the same type. A, B, C, D, E┄┄-marks indicating that devices of the same model are classified according to a certain parameter.

In addition to the four basic parts, suffixes are sometimes added to distinguish characteristics or further classify. Common suffixes are as follows:

1. The suffix of the Zener diode model.

The first part of the suffix is ??a letter, indicating the allowable error range of the stable voltage value. The letters A, B, C, D, and E respectively indicate that the allowable error is ±1%, ±2%, ±5%, ±10%, ± 15%; the second part of the suffix is ??a number, indicating the integer value of the nominal stable voltage; the third part of the suffix is ??the letter V, representing the decimal point, and the number after the letter V is the decimal value of the nominal stable voltage of the voltage regulator tube.

2. The suffix of the rectifier diode is a number, which indicates the maximum reverse peak withstand voltage of the device, and the unit is volts.

3. The suffix of the thyristor model is also a number, which usually indicates the smaller of the maximum reverse peak withstand voltage value and the maximum reverse turn-off voltage.

For example: BDX51-represents NPN silicon low-frequency high-power transistor, AF239S-represents PNP germanium high-frequency low-power transistor.