Participated in the development of the first high temperature CVD/HVPE composite deposition system in China, which can grow 3C-SiC and thick film GaN materials at the same time. On this basis, the natural science foundation project "Basic research on the growth of sic materials for blue light emitting diodes" was completed. He undertook the sub-project of the key application research and development project of Chinese Academy of Sciences "Growth and research of GaN/SiC/Si heteroepitaxial materials" and the sub-project of the 863 project "Research on key technologies of high-brightness blue-green light-emitting diodes and large-scale production" "Development and product development of nitride cubic GaN blue-green light-emitting devices" and successfully completed it. Participated in and undertook the research of several 863 projects, such as "GaN laser", "GaN ultraviolet detector" and "growth and research of GaN/Si-based materials", mainly engaged in gan/si (11) materials, GaN/Al2O3, AlGaN/GaN superlattice materials and InGaN. The experimental design methods commonly used in quality management are introduced into the epitaxial growth of gan-based materials and device structures, and gan-based laser epitaxial wafers are successfully prepared. On this basis, the Institute of Semiconductors of Chinese Academy of Sciences successfully developed the first GaN-based pulsed laser and room temperature continuous operation laser in Chinese mainland. Undertaking the 863 project "Research on production technology of near-ultraviolet LED for high-efficiency and high-power semiconductor lamps" and successfully completing it. He undertook the natural science fund project "MOCVD growth and application research of AlInN materials" (approval number: 60576003, 2006, 1-2008, 12), which was successfully completed. The final evaluation result is "Atomic Layer Chemical Vapor Deposition System for Group III Nitride Growth", a major scientific research equipment development project of Chinese Academy of Sciences, which has been successfully designed and developed. Participated in the establishment of Suzhou Neville Technology Co., Ltd., mainly responsible for the design and development of HVPE equipment and the development of HVPE growth technology. Two kinds of HVPE growth equipment, horizontal and vertical, were designed and successfully used for the growth of GaN self-supporting substrates.