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What is the relationship between MOS tube packaging and parameters, and how to choose a suitable packaged MOS tube

1. MOS tube packaging

Different package sizes of MOS tubes have different thermal resistance and power dissipation. It is necessary to consider the heat dissipation conditions and ambient temperature of the system (such as whether there is air cooling , shape and size restrictions of the radiator, whether the environment is closed, etc.), the basic principle is: on the premise of ensuring the temperature rise of the power MOS tube and system efficiency, select a power MOS tube with more universal parameters and packaging.

Common MOS tube packages are:

①Plug-in packaging: TO-3P, TO-247, TO-220, TO-220F, TO-251, TO-92; ② Surface mount type: TO-263, TO-252, SOP-8, SOT-23, DFN5*6, DFN3*3; different packaging forms, the corresponding limit current, voltage and heat dissipation effect of the MOS tube will be different. A brief introduction is as follows.

1. TO-3P/247

TO247 is one of the more commonly used small-outline packages and surface mount packages. 247 is the serial number of the packaging standard.

TO-247 package and TO-3P package both have 3-pin output. The bare chip (i.e. circuit diagram) inside can be exactly the same, so the functions and performance are basically the same, the most is heat dissipation and stability. It has a slight impact on the performance. TO247 is generally a non-insulated package. TO-247 tubes are generally used in high-power POWER. If used as a switching tube, its withstand voltage and current will be larger. It is commonly used in medium-, high-, and high-voltage MOS tubes. The product has the characteristics of high voltage resistance and strong breakdown resistance, and is suitable for use in places with medium voltage and large current (current above 10A, voltage resistance below 100V) above 120A, and voltage resistance above 200V.

2. TO-220/220F

These two package styles of MOS tubes have similar appearances and can be used interchangeably. However, TO-220 has a heat sink on the back, and its heat dissipation effect is better than TO-220F is better and relatively more expensive. These two package products are suitable for applications in medium-voltage and high-current applications below 120A and high-voltage and high-current applications below 20A.

 3. TO-251

This packaging product is mainly used to reduce costs and reduce product size. It is mainly used in environments with medium voltage and high current below 60A and high voltage below 7N.

4. TO-92

Only low-voltage MOS tubes (current below 10A, withstand voltage below 60V) and high-voltage 1N60/65 are used in this package, mainly to reduce costs.

5. TO-263

It is a variant of TO-220. It is mainly designed to improve production efficiency and heat dissipation. It supports extremely high current and voltage, below 150A. It is more common in medium voltage and high current MOS tubes above 30V.

6. TO-252

It is one of the current mainstream packages and is suitable for environments with high voltage below 7N and medium voltage below 70A.

Parameters of STD2NK100Z

Technology: Si

Installation style: SMD/SMT

Package/Box: TO-252-3

Number of channels: 1 Channel

Transistor polarity: N-Channel

Vds-drain-source breakdown voltage: 1 kV

Id-Continuous drain current: 1.85 A

Rds On-Drain-source on-resistance: 8.5 Ohms

Vgs th-Gate-source threshold voltage: 3 V

Vgs - Gate-source voltage: 10 V

Qg - Gate charge: 16 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Pd-Power dissipation: 70 W

Configuration: Single

Channel mode: Enhancement

Brand name: SuperMESH

Package: Cut Tape

Package: MouseReel

Package: Reel

Height: 2.4 mm

Length: 6.6 mm

Series: STD2NK100Z

Transistor type: 1 N-Channel Power MOSFET

Width: 6.2 mm

Brand: STMicroelectronics

Forward transconductance - minimum: 2.4 S

Fall time: 32.5 ns

Product type: MOSFET

Rise time: 6.5 ns

Factory packaged quantity: 2500

Subcategory: MOSFETs

Typical shutdown delay time: 41.5 ns

Typical on-delay time: 7.2 ns

Unit weight: 4 g